Enhanced efficiency and stability of polymer solar cells with TiO2 nanoparticles buffer layer
Identifieur interne : 000135 ( Main/Repository ); précédent : 000134; suivant : 000136Enhanced efficiency and stability of polymer solar cells with TiO2 nanoparticles buffer layer
Auteurs : RBID : Pascal:14-0095575Descripteurs français
- Pascal (Inist)
- Evaluation performance, Cellule solaire organique, Couche active, Cathode, Combinaison diversité, Microscopie électronique transmission, Diffraction électron sélection aire, Diffraction RX, Microscopie force atomique, Cristallinité, Dimension particule, Diffusion lumière, Structure lamellaire, Conversion énergie, Taux conversion, Addition étain, Courant court circuit, Diffusion(transport), Oxyde de titane, Nanoparticule, Couche tampon, Oxyde d'indium, Styrènesulfonate polymère, Thiophène dérivé polymère, Mélange polymère, Acide butyrique, Ester, Composé du fullerène, Oxygène, Matériau dopé, 6837P, 8105T, 6630P, 66, TiO2, ITO.
- Wicri :
- concept : Oxygène.
English descriptors
- KwdEn :
- Active layer, Atomic force microscopy, Buffer layer, Butyric acid, Cathode, Conversion rate, Crystallinity, Diffusion, Diversity combining, Doped materials, Energy conversion, Ester, Fullerene compounds, Indium oxide, Lamellar structure, Light scattering, Nanoparticle, Organic solar cells, Oxygen, Particle size, Performance evaluation, Polymer blends, SAED, Short circuit currents, Styrenesulfonate polymer, Thiophene derivative polymer, Tin addition, Titanium oxide, Transmission electron microscopy, X ray diffraction.
Abstract
TiO2 sols synthesized with a facile solution-based method were used as a buffer layer between the active layer and the cathode Al in conventional structure polymer solar cells (PSCs). Using transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD) and atomic force microscopy (AFM), the morphological and crystallographic properties of synthesized TiO2 nanoparticles (TiO2 NPs) as well as the buffer layer were studied in detail. It was observed that by increasing H2O in the process of peptization both the crystallinity and particle size of TiO2 NPs were enhanced, while the particles in sol showed a narrower size distribution conformed by dynamic light scattering. Inserting TiO2 NPs as a buffer layer in conventional structure PSCs, both the power conversion efficiency (PCE) and stability were improved dramatically. PSCs based on the structure of ITO/PEDOT:PSS/P3HT:PCBM/TiO2 NPs/Al showed the short-circuit current (Jsc) of 12.83 mA/cm2 and the PCE of 4.24%. which were improved by 31% and 37%, respectively comparing with the reference devices without a TiO2 buffer layer. The stability measurement showed that PSC devices with a TiO2 NPs buffer layer could retain 80% of the original PCEs after exposed in air for 200 h, much better than the devices without such a buffer layer. The effect can be attributed to the protection by the buffer layer against oxygen and H2O diffusion into the active layers. The observations indicate that TiO2 NPs synthesized by facile solution-based method have great potential applications in PSCs, especially for large-area printed PSCs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced efficiency and stability of polymer solar cells with TiO<sub>2</sub> nanoparticles buffer layer</title><author><name>JIAN XIONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>BINGCHU YANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>CONGHUA ZHOU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>JUNLIANG YANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>HAICHAO DUAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 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410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>XIANG ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>XINGDA XIA</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>LEI ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>HAN HUANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation></author><author><name>YONGLI GAO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Changsha, Hunan 410083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Astronomy, University of Rochester</s1><s2>Rochester, NY 14627</s2><s3>USA</s3><sZ>11 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Rochester, NY 14627</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0095575</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0095575 INIST</idno><idno type="RBID">Pascal:14-0095575</idno><idno type="wicri:Area/Main/Corpus">000038</idno><idno type="wicri:Area/Main/Repository">000135</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Atomic force microscopy</term><term>Buffer layer</term><term>Butyric acid</term><term>Cathode</term><term>Conversion rate</term><term>Crystallinity</term><term>Diffusion</term><term>Diversity combining</term><term>Doped materials</term><term>Energy conversion</term><term>Ester</term><term>Fullerene compounds</term><term>Indium oxide</term><term>Lamellar structure</term><term>Light scattering</term><term>Nanoparticle</term><term>Organic solar cells</term><term>Oxygen</term><term>Particle size</term><term>Performance evaluation</term><term>Polymer blends</term><term>SAED</term><term>Short circuit currents</term><term>Styrenesulfonate polymer</term><term>Thiophene derivative polymer</term><term>Tin addition</term><term>Titanium oxide</term><term>Transmission electron microscopy</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Cellule solaire organique</term><term>Couche active</term><term>Cathode</term><term>Combinaison diversité</term><term>Microscopie électronique transmission</term><term>Diffraction électron sélection aire</term><term>Diffraction RX</term><term>Microscopie force atomique</term><term>Cristallinité</term><term>Dimension particule</term><term>Diffusion lumière</term><term>Structure lamellaire</term><term>Conversion énergie</term><term>Taux conversion</term><term>Addition étain</term><term>Courant court circuit</term><term>Diffusion(transport)</term><term>Oxyde de titane</term><term>Nanoparticule</term><term>Couche tampon</term><term>Oxyde d'indium</term><term>Styrènesulfonate polymère</term><term>Thiophène dérivé polymère</term><term>Mélange polymère</term><term>Acide butyrique</term><term>Ester</term><term>Composé du fullerène</term><term>Oxygène</term><term>Matériau dopé</term><term>6837P</term><term>8105T</term><term>6630P</term><term>66</term><term>TiO2</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">TiO<sub>2</sub> sols synthesized with a facile solution-based method were used as a buffer layer between the active layer and the cathode Al in conventional structure polymer solar cells (PSCs). Using transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD) and atomic force microscopy (AFM), the morphological and crystallographic properties of synthesized TiO<sub>2</sub> nanoparticles (TiO<sub>2</sub> NPs) as well as the buffer layer were studied in detail. It was observed that by increasing H<sub>2</sub>O in the process of peptization both the crystallinity and particle size of TiO<sub>2</sub> NPs were enhanced, while the particles in sol showed a narrower size distribution conformed by dynamic light scattering. Inserting TiO<sub>2</sub> NPs as a buffer layer in conventional structure PSCs, both the power conversion efficiency (PCE) and stability were improved dramatically. PSCs based on the structure of ITO/PEDOT:PSS/P3HT:PCBM/TiO<sub>2</sub> NPs/Al showed the short-circuit current (J<sub>sc</sub>) of 12.83 mA/cm<sup>2</sup> and the PCE of 4.24%. which were improved by 31% and 37%, respectively comparing with the reference devices without a TiO<sub>2</sub> buffer layer. The stability measurement showed that PSC devices with a TiO<sub>2</sub> NPs buffer layer could retain 80% of the original PCEs after exposed in air for 200 h, much better than the devices without such a buffer layer. The effect can be attributed to the protection by the buffer layer against oxygen and H<sub>2</sub>O diffusion into the active layers. The observations indicate that TiO<sub>2</sub> NPs synthesized by facile solution-based method have great potential applications in PSCs, especially for large-area printed PSCs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced efficiency and stability of polymer solar cells with TiO<sub>2</sub> nanoparticles buffer layer</s1></fA08><fA11 i1="01" i2="1"><s1>JIAN XIONG</s1></fA11><fA11 i1="02" i2="1"><s1>BINGCHU YANG</s1></fA11><fA11 i1="03" i2="1"><s1>CONGHUA ZHOU</s1></fA11><fA11 i1="04" i2="1"><s1>JUNLIANG YANG</s1></fA11><fA11 i1="05" i2="1"><s1>HAICHAO DUAN</s1></fA11><fA11 i1="06" i2="1"><s1>WENLONG HUANG</s1></fA11><fA11 i1="07" i2="1"><s1>XIANG ZHANG</s1></fA11><fA11 i1="08" i2="1"><s1>XINGDA XIA</s1></fA11><fA11 i1="09" i2="1"><s1>LEI ZHANG</s1></fA11><fA11 i1="10" i2="1"><s1>HAN HUANG</s1></fA11><fA11 i1="11" i2="1"><s1>YONGLI GAO</s1></fA11><fA14 i1="01"><s1>Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="02"><s1>Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University</s1><s2>Changsha, Hunan 410083</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics and Astronomy, University of Rochester</s1><s2>Rochester, NY 14627</s2><s3>USA</s3><sZ>11 aut.</sZ></fA14><fA20><s1>835-843</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000500416400010</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0095575</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>TiO<sub>2</sub> sols synthesized with a facile solution-based method were used as a buffer layer between the active layer and the cathode Al in conventional structure polymer solar cells (PSCs). Using transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD) and atomic force microscopy (AFM), the morphological and crystallographic properties of synthesized TiO<sub>2</sub> nanoparticles (TiO<sub>2</sub> NPs) as well as the buffer layer were studied in detail. It was observed that by increasing H<sub>2</sub>O in the process of peptization both the crystallinity and particle size of TiO<sub>2</sub> NPs were enhanced, while the particles in sol showed a narrower size distribution conformed by dynamic light scattering. Inserting TiO<sub>2</sub> NPs as a buffer layer in conventional structure PSCs, both the power conversion efficiency (PCE) and stability were improved dramatically. PSCs based on the structure of ITO/PEDOT:PSS/P3HT:PCBM/TiO<sub>2</sub> NPs/Al showed the short-circuit current (J<sub>sc</sub>) of 12.83 mA/cm<sup>2</sup> and the PCE of 4.24%. which were improved by 31% and 37%, respectively comparing with the reference devices without a TiO<sub>2</sub> buffer layer. The stability measurement showed that PSC devices with a TiO<sub>2</sub> NPs buffer layer could retain 80% of the original PCEs after exposed in air for 200 h, much better than the devices without such a buffer layer. The effect can be attributed to the protection by the buffer layer against oxygen and H<sub>2</sub>O diffusion into the active layers. The observations indicate that TiO<sub>2</sub> NPs synthesized by facile solution-based method have great potential applications in PSCs, especially for large-area printed PSCs.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07W</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A16C</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05T</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Couche active</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Active layer</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Capa 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l="FRE"><s0>66</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>TiO2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>132</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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